2SC5945 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO 200 VEmitter-base voltage VEBO 5 VCollector current IC 15 ABase current IB 1.5 ACollector powe

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitVCBOCollector-base voltage 200 V VCEOCollector-emitter voltage 200 V VEBOEmitter-base voltage 5 V Coll

2SC5946NPN Unit : mm0.33+0.05 0.10+0.050.02 0.023 fT SSS 0.23+0.05 1 20.02(0.40)(0.40)0.800.

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5949DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOComplement to Type 2SA2121100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco