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2SC6114 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC6114
   Código: N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: VMN3
 

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2SC6114 Datasheet (PDF)

 ..1. Size:77K  rohm
 2sc6114.pdf pdf_icon

2SC6114

2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3Small signal low frequency amplifier Features 0.220.16(3)1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.370.170.35NPN silicon epitaxial 0.6planar transistor (1) Base(2) EmitterAbbreviated symbol : N(3) Collector Dimensio

 0.1. Size:352K  chenmko
 2sc6114g5gp.pdf pdf_icon

2SC6114

CHENMKO ENTERPRISE CO.,LTD2SC6114G5GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.)* PC= 150mW CONSTRUCTION* NPN Silicon Transistor C (3)

 0.2. Size:75K  chenmko
 2sc6114t1gp.pdf pdf_icon

2SC6114

CHENMKO ENTERPRISE CO.,LTD2SC6114T1GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (SOT-923)SOT-923* Low cob. Cob=0.2pF(Typ.)* PC= 150mW0.18~0.26 0.08~0.14CONSTRUCTION(3)* NPN Silicon Transistor(1) (2)0.11~0.190.36~0.410.35(typ)C (3) 0.565~0.635CIRCUITSOT-923

 8.1. Size:46K  sanyo
 2sc6118ls.pdf pdf_icon

2SC6114

Ordering number : ENA0578 2SC6118LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6118LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FTB1184 | 2SC1640 | BF468 | KTC801F | NSBC114EPDXV6T1G | BD261 | SAP16N

 

 
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