2SA1900 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1900 Transistors Medium power transistor (-50V, -1A) 2SA1900 Dimensions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = -0.15V at IC / MPT3 IB = -500mA / -50mA 2) PC=2W (on 40 40 0.7mm ceramic board) 3) Complements the 2SC5053 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO -60 V Col

2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl

SMD Type Transistors PNP Transistors 2SA1900 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-50V Complements the 2SC5053 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Collector Current (Pw = 20 ms) -ICP 2 A 0.5 PC W Collector Power Dissipation 2 1) Junction Temperature Tj

JMnic Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1909 DESCRIPTION With TO-3PML package Complement to type 2SC5101 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION With TO-3PML package Complement to type 2SC5099 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 140 V ICBO VCB= 140V 10max A VCEO 140 V IEBO VEB= 6V

2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 80 V ICBO VCB= 80V 10max A VCEO 80 V IEBO VEB= 6V 10m

isc Silicon PNP Power Transistor 2SA1908 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC5099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI