2N6287 Todos los transistores

 ..1. Size:214K  motorola
 2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf

Order this document MOTOROLA by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6282 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applica- 2N6284* tions. PNP High DC Current Gain @ IC = 10 Adc 2N6285 hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287

 ..2. Size:49K  st
 2n6284 2n6287.pdf

2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN TO-3 power transistor in monolithic Darlington configuration moun

 ..3. Size:174K  aeroflex
 2n6286 2n6287.pdf

PNP Darlington Power Silicon Transistor 2N6286 & 2N6287 Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6286 2N6287 Units Collector - Emitter Voltage VCEO -80 -100 Vdc Collector - Base Voltage VCBO -80 -100 Vdc Emitter - Base Voltage VEBO -7.0 Vdc Base Current IB -0.5 Adc Collector Current IC -20 Adc (1

 ..4. Size:195K  inchange semiconductor
 2n6287.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6287 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -10 Adc FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to type 2N6284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intende

 ..5. Size:118K  inchange semiconductor
 2n6285 2n6286 2n6287.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and

 0.1. Size:135K  onsemi
 2n6284g 2n6284g 2n6287g.pdf

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 0.2. Size:135K  onsemi
 2n6287g.pdf

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 9.1. Size:149K  motorola
 2n6107 2n6111 2n6288 2n6109 2n6292.pdf

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All

 9.2. Size:70K  central
 2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:241K  onsemi
 2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

 9.4. Size:241K  onsemi
 2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

 9.5. Size:593K  onsemi
 2n6288g.pdf

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors http //onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N6111, 2N6288 30 - 50 - 70 VOLTS, 40 WA

 9.6. Size:135K  onsemi
 2n6286g.pdf

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http //onsemi.com Features 20 AMPERE High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 9.7. Size:211K  mospec
 2n6282-87.pdf

A A A A

 9.8. Size:101K  bocasemi
 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com

 9.9. Size:181K  cdil
 2n6288.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6288 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.1

 9.10. Size:188K  inchange semiconductor
 2n6289.pdf

isc Silicon NPN Power Transistor 2N6289 DESCRIPTION DC Current Gain- h = 30-150@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.11. Size:122K  inchange semiconductor
 2n6288 2n6290 2n6292.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

 9.12. Size:118K  inchange semiconductor
 2n6282 2n6283 2n6284.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 DESCRIPTION With TO-3 package Complement to type 2N6285/6286/6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and

 9.13. Size:209K  inchange semiconductor
 2n6284.pdf

isc Silicon NPN Darlingtion Power Transistor 2N6284 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I =10 Adc FE C Collector-Emitter Sustaining Voltage- V =100V(Min) CEO(SUS) Complement to type 2N6287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for general purpose amplif

 9.14. Size:227K  inchange semiconductor
 2n6280.pdf

isc Silicon NPN Power Transistor 2N6280 DESCRIPTION Collector-Emitter Breakdown Voltage- V =140V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 14

 9.15. Size:223K  inchange semiconductor
 2n6282.pdf

isc Silicon NPN Darlingtion Power Transistor 2N6282 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = 10 Adc FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to type 2N6285 APPLICATIONS Intended for general purpose amplifier and low frequency switching applications, such as linear and switching indu- str

 9.16. Size:194K  inchange semiconductor
 2n6286.pdf

isc Silicon PNP Darlingtion Power Transistor 2N6286 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -10 Adc FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to type 2N6283 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for general purpose amp

 9.17. Size:200K  inchange semiconductor
 2n6283.pdf

isc Silicon NPN Darlingtion Power Transistor 2N6283 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I =10 Adc FE C Collector-Emitter Sustaining Voltage- V =80V(Min) CEO(SUS) Complement to type 2N6286 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for general purpose amplifi

 9.18. Size:227K  inchange semiconductor
 2n6281.pdf

isc Silicon NPN Power Transistor 2N6281 DESCRIPTION Collector-Emitter Breakdown Voltage- V =150V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 15