2N629. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N629 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N629

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 40 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.1 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

Búsqueda de reemplazo de 2N629

- Selecciónⓘ de transistores por parámetros

2N629 datasheet

0.1. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf pdf_icon

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All

0.2. Size:66K central
2n6294 2n6295 2n6296 2n6297.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.3. Size:70K central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.4. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf pdf_icon

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

0.5. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf pdf_icon

0.6. Size:102K onsemi
2n6292g.pdf pdf_icon

0.7. Size:102K onsemi
2n6111g 2n6111g 2n6292g.pdf pdf_icon

0.8. Size:177K mospec
2n6298-99 2n6300-01.pdf pdf_icon

A A A A

0.9. Size:25K semelab
2n6299smd05 2n6299smd 2n6301smd 2n6301smd05.pdf pdf_icon

2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

0.10. Size:101K bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf pdf_icon

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com

0.11. Size:95K cdil
2n6107 2n6292.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100

0.12. Size:288K cdil
2n6290.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40

0.13. Size:121K jmnic
2n6294 2n6295.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum rating

0.14. Size:122K jmnic
2n6298 2n6299.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outlin

0.15. Size:51K jmnic
2n6296 2n6297.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings

0.16. Size:119K jmnic
2n6291 2n6293.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION 1 Base C

0.17. Size:185K aeroflex
2n6298 2n6299.pdf pdf_icon

PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot

0.18. Size:189K inchange semiconductor
2n6290.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6290 DESCRIPTION DC Current Gain- h = 30-150@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Complement to Type 2N6109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RA

0.19. Size:195K inchange semiconductor
2n6292.pdf pdf_icon

isc Product Specification isc Silicon NPN Power Transistor 2N6292 DESCRIPTION DC Current Gain- h = 30-150@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Complement to Type 2N6107 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B

0.20. Size:189K inchange semiconductor
2n6293.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6293 DESCRIPTION DC Current Gain- h = 30-150@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

0.21. Size:122K inchange semiconductor
2n6288 2n6290 2n6292.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

0.22. Size:171K inchange semiconductor
2n6294 2n6295.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximu

0.23. Size:131K inchange semiconductor
2n6298 2n6299.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T

0.24. Size:173K inchange semiconductor
2n6296 2n6297.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximu

0.25. Size:120K inchange semiconductor
2n6291 2n6293.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION 1

0.26. Size:188K inchange semiconductor
2n6291.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6291 DESCRIPTION DC Current Gain- h = 30-150@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

Otros transistores... 2N6282 , 2N6283 , 2N6284 , 2N6285 , 2N6286 , 2N6287 , 2N6288 , 2N6289 , 2SB817 , 2N6290 , 2N6291 , 2N6292 , 2N6293 , 2N6294 , 2N6295 , 2N6296 , 2N6297 .