2SA2199 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA2199
   Código: P
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 110 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: VMN3

Búsqueda de reemplazo de transistor bipolar 2SA2199

2SA2199 Datasheet (PDF)

..1. Size:81K rohm
2sa2199.pdf

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit : mm) Small signal low frequency amplifier VMN3 Features 0.220.161) Excellent hFE linearity. (3)2) Complements the 2SC6114. Structure (1) (2)PNP silicon epitaxial 0.370.170.35planar transistor 0.6(1) Base(2) EmitterAbbreviated symbol : P (3) C

8.1. Size:184K toshiba
2sa2190.pdf

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 180 VCollector-emitter voltage VCEO - 180 VEmitter-base voltage VEBO -

8.2. Size:126K toshiba
2sa2195.pdf

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 1 High-speed switching: tf = 90 ns (typ.) 2 3Absolute Maximum Ratings

8.3. Size:502K cn sptech
2sa2198.pdf

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA2198DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2919DCSM

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050