2SA9012 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA9012
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 64
Paquete / Cubierta: TO-92

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JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

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JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO

9.6. Size:217K inchange semiconductor
2sa900.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -18V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SC1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATI

9.7. Size:195K inchange semiconductor
2sa907 2sa908 2sa909.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY

9.8. Size:194K inchange semiconductor
2sa908.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA908DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

9.9. Size:194K inchange semiconductor
2sa907.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA907DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1584Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

9.10. Size:194K inchange semiconductor
2sa909.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA909DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOComplement to Type 2SC1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .