2SB1714 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB1714
   Código: XY
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 280 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 270
   Paquete / Cubierta: MPT3

Búsqueda de reemplazo de transistor bipolar 2SB1714

2SB1714 Datasheet (PDF)

..1. Size:118K rohm
2sb1714.pdf

2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XYPNP epitaxial planar silicon tra

8.1. Size:98K rohm
2sb1713.pdf

2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XWPNP epitaxial planar silicon transistor

8.2. Size:104K rohm
2sb1710.pdf

2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( )1 20.95 0.95VCE(sat) -350mV 0.161.9(1) Base at Ic = -500mA / IB = -25mA (2) E

8.3. Size:73K no
2sb170 2sb171 2sb173 2sb175.pdf