2SD2096 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

Ordering number:EN3174BPNP/NPN Epitaxial Planar Silicon Transistors2SB1394/2SD2099Compact Motor Driver ApplicationsFeatures Package Dimensions Contains input resistance (R1), base-to-emitterunit:mmresistance (RBE).2038A Contains diode between collector and emitter.[2SB1394/2SD2099] Low saturation voltage. Large current capacity. Small-sized package makin

Ordering number:EN37202SB1388 : PNP Epitaxial Planar Silicon Transistors2SD2093 : NPN Triple Diffused Planar Silicon Transistors2SB1388/2SD2093Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2039A[2SB1388/2SD2093]Features High DC current gain. Large current capacity and la

2SD2098 / 2SD2118 / 2SD2097TransistorsLow VCE(sat) transistor (strobe flash)2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features1) Low VCE(sat).2SD2098+0.2VCE(sat) = 0.25V (Typ.) 4.5-0.1+0.21.51.60.1 -0.1(IC/IB = 4A / 0.1A)2) Excellent DC current gain characteristics.3) Complements the 2SB1386 / 2SB1412 / 2SB1326.(1) (2) (3)0.4+0.1-0.05

TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES 1. BASE Excellent DC current gain characteristics Complements the 2SB1386 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Vol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1388 High DC current gain Low saturation voltage Large current capacity and large ASO APPLICATIONS Motor drivers Printer hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION1 Bas

2SD2098 FEATURESSOT-89 Excellent DC current gain characteristics Complements the 2SB1386 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 50 V3. EMITTER 3 VCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power

2SD2098 SOT-89 Features1. BASE SOT-892. COLLECTOR 1 4.6B2 4.41.61.83. EMITTER 1.41.43 Features2.64.252.43.75 Excellent DC current gain characteristics 0.8MIN Complements the 2SB1386 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Param

2SD2097(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 4.455.21 3. BASE 4.322.92 5.33MINFeatures Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.192.67Symbol Parameter Value Units1.141.40VCBO Collector-B

2SD2098NPN Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValueVdcCollector-Emitter Voltage 20VCEOVdcCollector-Base Voltage 50VCBOEmitter-Base Voltage VEBO 6.0 VdcIAdc(DC)C5.0Collector CurrentICP 10 Adc (Pulse)(1)PCCollector Power Dissipation 0.5 WTj , Tstg %CJuncti

SMD Type TransistorsNPN Transistors2SD20991.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB13940.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

SMD Type TransistorsNPN Transistors2SD20981.70 0.1 Features Excellent DC current gain characteristics Complements the 2SB13860.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Curren

CHENMKO ENTERPRISE CO.,LTD2SD2098PGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. ( DPAK )DPAK* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability..094 (2.38).086 (2.19).022 (0.55).018 (0.45)CONSTRUCTION* NPN Cilicon Tran

CHENMKO ENTERPRISE CO.,LTD2SD2098GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.

isc Silicon NPN Power Transistor 2SD2095DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD2094DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2091DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency power amplifi

isc Silicon NPN Darlington Power Transistor 2SD2093DESCRIPTIONMicaless package facilitating mounting.Large current capacity and large ASO.Low saturation volatage.: V = 1.5V(Max) @I = 5A,I =10mACE(sat) C BHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes