2SD2185 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

SMD Type TransistorsNPN Transistors2SD2185SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB14400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute

Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute

isc Silicon NPN Power Transistor 2SD218DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow saturation voltageExcellent current gain linearityABSOLUTE MAXIMUM RATINGS(T =25