2SD2223 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2223
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO-220MF
Búsqueda de reemplazo de transistor bipolar 2SD2223
2SD2223 Datasheet (PDF)
2sd2223.pdf
Ordering number:EN3365PNP/NPN Epitaxial Planar Silicon Transistors2SB1471/2SD2223Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1471/2SD2223]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :
2sd2224.pdf
Ordering number:EN3366PNP/NPN Epitaxial Planar Silicon Transistors2SB1472/2SD2224Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049B[2SB1472/2SD2224]Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.E :
2sd2226k.pdf
2SD2226KDatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLow frequency amplifierlPackagi
2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
2sd2225.pdf
Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim
2sd2220.pdf
Power Transistors2SD2220Silicon NPN triple diffusion planar type DarlingtonFor low-frequency amplificationUnit: mm7.5 0.2 4.5 0.290Features0.65 0.1 0.85 0.1Suitable for the driver circuit of a motor, a printer hammer andlike that, since this transistor is designed for the high forward1.0 0.10.8C 0.8Ccurrent transfer ratio hFE0.7 0.1 0.7 0.1A shunt r
2sd2225 e.pdf
Transistor2SD2225Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB14732.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO of 120V.Optimum for low-frequency driver amplification. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maxim
2sd2222.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out
2sd2222.pdf
isc Silicon NPN Darlington Power Transistor 2SD2222DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3500( Min.) @(I = 7A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
