2SD2383 Todos los transistores

 ..1. Size:114K  nec
 2sd2383.pdf

DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2 dimension. This transistor is ideal for downsizing sets +0.1 0.65 0.15 1.5 requiring high voltage. 2 FEATURES High voltage 3 Small dimension 1 ORDERING

 ..2. Size:629K  kexin
 2sd2383.pdf

SMD Type Transistors NPN Transistors 2SD2383 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=300V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

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 2sd2387.pdf

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 8.2. Size:173K  toshiba
 2sd2386.pdf

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 8.3. Size:175K  toshiba
 2sd2384.pdf

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 8.4. Size:179K  toshiba
 2sd2385.pdf

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

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 2sd2382.pdf

Power Transistor 2SD2382 Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 V 65 5 V I V = 60V 10max A CBO CBO CB 10.0 3.3 2.8 C0.5 V 65 5 V I V = 6V 10max A CEO EBO EB V 6 V V I = 50mA 60 to 70 V EBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

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 2sd2389.pdf

Equivalent circuit C B Darlington 2SD2389 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2389 Symbol Conditions 2SD2389 Unit Unit 0.2 4.8 0.4 15.6 VCBO 160 ICBO VCB

 8.7. Size:206K  inchange semiconductor
 2sd2389.pdf

isc Silicon NPN Darlington Power Transistor 2SD2389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1559 Minimum Lot-to-Lot variations for robust device performance and reliable op

 8.8. Size:83K  inchange semiconductor
 2sd2386.pdf

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

 8.9. Size:204K  inchange semiconductor
 2sd2384.pdf

isc Silicon NPN Darlington Power Transistor 2SD2384 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 6A FE C Complement to Type 2SB1555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.10. Size:204K  inchange semiconductor
 2sd2385.pdf

isc Silicon NPN Darlington Power Transistor 2SD2385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 7A FE C Complement to Type 2SB1556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )