2SD2425 Todos los transistores

 ..1. Size:125K  nec
 2sd2425.pdf

DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES New package with dimensions in between those of small signal and powe

 ..2. Size:1283K  kexin
 2sd2425.pdf

SMD Type Transistors NPN Transistors 2SD2425 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB1578 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V

 8.1. Size:69K  sanyo
 2sd2426.pdf

Ordering number EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2084B [2SD2426] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Darlington connection. High DC current gain. 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector

 8.2. Size:129K  rohm
 2sd2422.pdf

 8.3. Size:45K  panasonic
 2sd2420.pdf

Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE 2 000 to 10 000 Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rati

 8.4. Size:34K  hitachi
 2sd2423.pdf

2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD2423 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50

 8.5. Size:952K  kexin
 2sd2423.pdf

SMD Type Transistors NPN Transistors 2SD2423 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 2.Collector (Typ) (Typ) E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

 8.6. Size:194K  inchange semiconductor
 2sd2422.pdf

isc Silicon NPN Darlington Power Transistor 2SD2422 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch