2SD2441 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD2441Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 450.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.153 2 1

Transistor2SD2441Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 450.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.153 2 1

SMD Type TransistorsNPN Transistors2SD2441SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm High breakdown voltage: VCBO = 100 V : V = 18 V EBO Low saturation voltage: V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B High speed: t = 1 s (typ.) (I = 5 A, I = 0.5 A) f C B High DC current gain: h = 200 (min) (V = 5 V, I = 0.5 A) FE CE CMaximum Ra

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 5 V

2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) SMT3at IC / IB = 0.4A / 20mA. 2) IC = 1A 2.9 1.10.4 0.83) Complements the 2SB1590K. (3)(2) (1) Packaging specification and hFE 0.95 0.950.151.9Type 2SD2444K(1)EmitterSMT3Package(2)BaseEach lead has same

2SB1590KTransistorsTransistors2SD2444K(96-150-B218)(96-247-D218)293Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

isc Silicon NPN Darlington Power Transistor 2SD2449DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh DC Current Gain-: h = 3000( Min.) @(I = 8A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 3.0V(Max)@ (I = 8A, I = 8mA)CE(sat) C BComplement to Type 2SB1594Minimum Lot-to-Lot variations for robust deviceperformance and reliable op