2SD2504 Todos los transistores

 ..1. Size:82K  panasonic
 2sd2504.pdf

Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 Collector-base voltage (Emitter open) VCBO 15 V 0.1 0.1 2.5+0

 8.1. Size:249K  toshiba
 2sd2500.pdf

2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.35 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base

 8.2. Size:215K  inchange semiconductor
 2sd2500.pdf

isc Silicon NPN Power Transistor 2SD2500 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co

 9.1. Size:232K  toshiba
 2sd2551.pdf

2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1700 V Low Saturation Voltage V = 5.0 V (Max.) CE (sat) High Speed t = 1.0 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBO

 9.2. Size:192K  toshiba
 2sd2526.pdf

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25 C)

 9.3. Size:250K  toshiba
 2sd2599.pdf

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 8 V (Max.) CE (sat) High Speed t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 9.4. Size:239K  toshiba
 2sd2550.pdf

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1700 V Low Saturation Voltage V = 5.0 V (Max.) CE (sat) High Speed t = 0.6 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMB

 9.5. Size:218K  toshiba
 2sd2584.pdf

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

 9.6. Size:178K  toshiba
 2sd2525.pdf

2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit mm High DC current gain 100 (min) Low saturation voltage V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-em

 9.7. Size:276K  toshiba
 2sd2539.pdf

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 9.8. Size:307K  toshiba
 2sd2553.pdf

2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mol

 9.9. Size:178K  toshiba
 2sd2531.pdf

 9.10. Size:101K  toshiba
 2sd2571.pdf

2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

 9.11. Size:71K  toshiba
 2sd2536.pdf

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit mm Micro Motor Drive, Hammer Drive Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.2 V (max) CE (sat) (I = 0.7 A, V = 4.2 V) C BH Zener diode included between collector and base. Max

 9.12. Size:298K  toshiba
 2sd2559.pdf

2SD2559 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 Horizontal Deflection Output for Color TV Unit mm High voltage VCBO = 1500 V Low saturation voltage V = 5 V (max) CE (sat) Bult-in damper type Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-

 9.13. Size:275K  toshiba
 2sd2586.pdf

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 9.14. Size:43K  sanyo
 2sd2580.pdf

Ordering number 5796 NPN Triple Diffused Planar Silicon Transistor 2SD2580 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2580] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

 9.15. Size:43K  sanyo
 2sd2581.pdf

Ordering number 5818 NPN Triple Diffused Planar Silicon Transistor 2SD2581 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2581] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

 9.16. Size:45K  sanyo
 2sd2578.pdf

Ordering number 5794 NPN Triple Diffused Planar Silicon Transistor 2SD2578 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2578] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

 9.17. Size:43K  sanyo
 2sd2579.pdf

Ordering number 5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2579] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

 9.18. Size:46K  nec
 2sd2582.pdf

DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RATI

 9.19. Size:47K  nec
 2sd2583.pdf

DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RAT

 9.20. Size:44K  rohm
 2sd2568.pdf

2SD2568 Transistors Power Transistor(400V,0.5A) 2SD2568 Features 1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 0.5 A 10 Collector power dissipation PC W(Tc=25 C) Junction temperature Tj 150 C St

 9.21. Size:1218K  rohm
 2sd2537.pdf

2SD2537 Middle Power Transistor (25V / 1.2A) Datasheet lOutline l SOT-89 Parameter Value SC-62 VCEO 25V IC 1.2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, Max. VCE(sat)=300mV at IC/IB=500mA/10mA. 2)High emitter-base voltage. (VEBO=12V) 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). lApplication l

 9.22. Size:43K  panasonic
 2sd2565 e.pdf

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automat

 9.23. Size:38K  panasonic
 2sd2575 e.pdf

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

 9.24. Size:34K  panasonic
 2sd2575.pdf

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

 9.25. Size:42K  panasonic
 2sd2527.pdf

Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6

 9.26. Size:43K  panasonic
 2sd2528.pdf

Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 Ab

 9.27. Size:45K  panasonic
 2sd2556.pdf

Power Transistors 2SD2556 Silicon NPN epitaxial planer type Unit mm 6.5 0.1 For power switching 2.3 0.1 5.3 0.1 4.35 0.1 0.5 0.1 Features High forward current transfer ratio hFE Allowing supply with the radial taping 1.0 0.1 Low collector to emitter saturation voltage VCE(sat)

 9.28. Size:85K  panasonic
 2sd2573.pdf

Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Uni

 9.29. Size:54K  panasonic
 2sd2598.pdf

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

 9.30. Size:59K  panasonic
 2sd2598 e.pdf

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

 9.31. Size:38K  panasonic
 2sd2565.pdf

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automat

 9.32. Size:45K  panasonic
 2sd2530.pdf

Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 10.0 0.2 5.0 0.1 1.0 0.2 Features High forward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C 1.0 Low collector to emitter saturation voltage VCE(sat)

 9.33. Size:51K  panasonic
 2sd2544.pdf

Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0

 9.34. Size:45K  panasonic
 2sd2538.pdf

Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol

 9.35. Size:42K  panasonic
 2sd2549.pdf

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory 4.6 0.2 9.9 0.3 2.9 0.2 linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with 3.2 0.1 one screw 1.4 0.2 Absolute Maximum Rat

 9.36. Size:24K  sanken-ele
 2sd2561.pdf

Equivalent circuit C B Darlington 2SD2561 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Symbol 2SD2561 Unit Conditions 2SD2561 Unit 0.2 6.0 0.3 36.4 ICBO VCBO 150 V VCB=150

 9.37. Size:24K  sanken-ele
 2sd2562.pdf

Equivalent circuit C B Darlington 2SD2562 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) (Ta=25 C) Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit 0.2 0.2 5.5 15.6 VCBO 150 V ICBO VCB

 9.38. Size:22K  sanken-ele
 2sd2589.pdf

Darlington 2SD2589 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) External Dimensions FM-25(TO220) (Ta=25 C) Electrical Characteristics Symbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit 0.2 4.8 0.2 10.2 VCBO 110 V ICBO VCB=110V 100max A 0.1 2.0 IEBO

 9.39. Size:20K  sanken-ele
 2sd2558.pdf

C Equivalent circuit B Darlington 2SD2558 (70 ) E Silicon NPN Triple Diffused Planar Transistor Application Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2558 Unit Symbol Conditions 2SD2558 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 100max A I

 9.40. Size:20K  sanken-ele
 2sd2557.pdf

Equivalent circuit C B Darlington 2SD2557 (3.2k )(450 ) E Silicon NPN Triple Diffused Planar Transistor Application Series Regulator and General Purpose (Ta=25 C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25 C) Symbol 2SD2557 Unit Symbol Conditions 2SD2557 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 200 V ICBO VCB=200V 100max A

 9.41. Size:24K  sanken-ele
 2sd2560.pdf

Equivalent circuit C B Darlington 2SD2560 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2560 Unit Symbol Conditions 2SD2560 Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VC

 9.42. Size:461K  blue-rocket-elect
 2sd2583.pdf

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features Low saturation voltage, high DC current gain. / Applications Audio frequency amplifier and switching applica

 9.43. Size:451K  blue-rocket-elect
 2sd2531.pdf

 9.44. Size:1066K  kexin
 2sd2537.pdf

SMD Type Transistors NPN Transistors 2SD2537 1.70 0.1 Features High DC current gain. High emitter-base voltage. Low saturation voltage. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 9 Col

 9.45. Size:219K  inchange semiconductor
 2sd2580.pdf

isc Silicon NPN Power Transistor 2SD2580 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.46. Size:221K  inchange semiconductor
 2sd2561.pdf

isc Silicon NPN Darlington Power Transistor 2SD2561 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1648 Minimum Lot-to-Lot variations for robust device performance and reliable

 9.47. Size:180K  inchange semiconductor
 2sd254.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD254 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Collector Power Dissipation- P = 20W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

 9.48. Size:208K  inchange semiconductor
 2sd2593.pdf

isc Silicon NPN Power Transistor 2SD2593 DESCRIPTION Low Collector Saturation Voltage- V = 1.2 (Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60

 9.49. Size:213K  inchange semiconductor
 2sd2551.pdf

isc Silicon NPN Power Transistor 2SD2551 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.50. Size:222K  inchange semiconductor
 2sd2562.pdf

isc Silicon NPN Darlington Power Transistor 2SD2562 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable

 9.51. Size:214K  inchange semiconductor
 2sd2524.pdf

isc Silicon NPN Power Transistor 2SD2524 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.52. Size:206K  inchange semiconductor
 2sd2583.pdf

isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION High Collector Current-I = 5A C Low Saturation Voltage - V = 0.15V(Max)@ I =1A, I = 50mA CE(sat) C B High DC Current Gain- h = 150 600@ I = 1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications. ABSO

 9.53. Size:213K  inchange semiconductor
 2sd2599.pdf

isc Silicon NPN Power Transistor 2SD2599 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.54. Size:221K  inchange semiconductor
 2sd2589.pdf

isc Silicon NPN Darlington Power Transistor 2SD2589 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 5mA) CE(sat) C B Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable o

 9.55. Size:180K  inchange semiconductor
 2sd256.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD256 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

 9.56. Size:213K  inchange semiconductor
 2sd2550.pdf

isc Silicon NPN Power Transistor 2SD2550 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.57. Size:216K  inchange semiconductor
 2sd2581.pdf

isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.58. Size:214K  inchange semiconductor
 2sd2539.pdf

isc Silicon NPN Power Transistor 2SD2539 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 9.59. Size:214K  inchange semiconductor
 2sd2553.pdf

isc Silicon NPN Power Transistor 2SD2553 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV applications High speed switching applicat

 9.60. Size:208K  inchange semiconductor
 2sd2531.pdf

isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2.5A CE(sat) C High Power Dissipation- P = 25W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.61. Size:216K  inchange semiconductor
 2sd2558.pdf

isc Silicon NPN Darlington Power Transistor 2SD2558 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC Current Gain- h = 1500( Min.) @(I = 1A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 1A, I = 5mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

 9.62. Size:214K  inchange semiconductor
 2sd2559.pdf

isc Silicon NPN Power Transistor 2SD2559 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.63. Size:214K  inchange semiconductor
 2sd2586.pdf

isc Silicon NPN Power Transistor 2SD2586 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.64. Size:215K  inchange semiconductor
 2sd2578.pdf

isc Silicon NPN Power Transistor 2SD2578 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.65. Size:213K  inchange semiconductor
 2sd2549.pdf

isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector Saturation Voltgae- V = 0.7V(Max.)@ I = 3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2

 9.66. Size:214K  inchange semiconductor
 2sd2557.pdf

isc Silicon NPN Darlington Power Transistor 2SD2557 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 1A, V = 5V FE C CE Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2

 9.67. Size:216K  inchange semiconductor
 2sd2560.pdf

isc Silicon NPN Darlington Power Transistor 2SD2560 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1647 Minimum Lot-to-Lot variations for robust device performance and reliable

 9.68. Size:216K  inchange semiconductor
 2sd2579.pdf

isc Silicon NPN Power Transistor 2SD2579 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage