2SD2530 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD2530Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification10.00.2 5.00.11.00.2 Features High forward current transfer ratio hFE Allowing supply with the radial taping1.20.1C 1.0 Low collector to emitter saturation voltage VCE(sat):

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit: mm Micro Motor Drive, Hammer Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.2 V (max) CE (sat)(I = 0.7 A, V = 4.2 V) C BH Zener diode included between collector and base. Max

2SD2537Middle Power Transistor (25V / 1.2A)DatasheetlOutlinel SOT-89 Parameter Value SC-62 VCEO25VIC1.2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, Max.VCE(sat)=300mV at IC/IB=500mA/10mA.2)High emitter-base voltage.(VEBO=12V)3)PD=2W (Mounted on a ceramic board(40400.7mm) ).lApplicationl

Power Transistors2SD2538Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification 4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol

2SD2531(BR3DA2531F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features Low collector saturation voltage, high power dissipation. / Applications Power amplifier applications.

SMD Type TransistorsNPN Transistors2SD25371.70 0.1 Features High DC current gain. High emitter-base voltage. Low saturation voltage.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 9 Col

isc Silicon NPN Power Transistor 2SD2539DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SD2531DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2.5ACE(sat) CHigh Power Dissipation-: P = 25W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT