2SD2550 Todos los transistores

 ..1. Size:239K  toshiba
 2sd2550.pdf

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1700 V Low Saturation Voltage V = 5.0 V (Max.) CE (sat) High Speed t = 0.6 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMB

 ..2. Size:213K  inchange semiconductor
 2sd2550.pdf

isc Silicon NPN Power Transistor 2SD2550 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.1. Size:232K  toshiba
 2sd2551.pdf

2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1700 V Low Saturation Voltage V = 5.0 V (Max.) CE (sat) High Speed t = 1.0 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBO

 8.2. Size:307K  toshiba
 2sd2553.pdf

2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mol

 8.3. Size:298K  toshiba
 2sd2559.pdf

2SD2559 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 Horizontal Deflection Output for Color TV Unit mm High voltage VCBO = 1500 V Low saturation voltage V = 5 V (max) CE (sat) Bult-in damper type Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-

 8.4. Size:45K  panasonic
 2sd2556.pdf

Power Transistors 2SD2556 Silicon NPN epitaxial planer type Unit mm 6.5 0.1 For power switching 2.3 0.1 5.3 0.1 4.35 0.1 0.5 0.1 Features High forward current transfer ratio hFE Allowing supply with the radial taping 1.0 0.1 Low collector to emitter saturation voltage VCE(sat)

 8.5. Size:20K  sanken-ele
 2sd2558.pdf

C Equivalent circuit B Darlington 2SD2558 (70 ) E Silicon NPN Triple Diffused Planar Transistor Application Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2558 Unit Symbol Conditions 2SD2558 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 100max A I

 8.6. Size:20K  sanken-ele
 2sd2557.pdf

Equivalent circuit C B Darlington 2SD2557 (3.2k )(450 ) E Silicon NPN Triple Diffused Planar Transistor Application Series Regulator and General Purpose (Ta=25 C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25 C) Symbol 2SD2557 Unit Symbol Conditions 2SD2557 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 200 V ICBO VCB=200V 100max A

 8.7. Size:213K  inchange semiconductor
 2sd2551.pdf

isc Silicon NPN Power Transistor 2SD2551 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.8. Size:214K  inchange semiconductor
 2sd2553.pdf

isc Silicon NPN Power Transistor 2SD2553 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV applications High speed switching applicat

 8.9. Size:216K  inchange semiconductor
 2sd2558.pdf

isc Silicon NPN Darlington Power Transistor 2SD2558 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC Current Gain- h = 1500( Min.) @(I = 1A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 1A, I = 5mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

 8.10. Size:214K  inchange semiconductor
 2sd2559.pdf

isc Silicon NPN Power Transistor 2SD2559 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.11. Size:214K  inchange semiconductor
 2sd2557.pdf

isc Silicon NPN Darlington Power Transistor 2SD2557 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 1A, V = 5V FE C CE Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2