2SD2571 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2571
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: SC-67
Búsqueda de reemplazo de transistor bipolar 2SD2571
2SD2571 Datasheet (PDF)
2sd2571.pdf
2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating
2sd2578.pdf
Ordering number:5794NPN Triple Diffused Planar Silicon Transistor2SD2578Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2578] Adoption of MBIT process.16.05.63.4 On-chip damper diode.3.12.82.0 2.01.00.6
2sd2579.pdf
Ordering number:5795NPN Triple Diffused Planar Silicon Transistor2SD2579Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2579] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.61 2 31:Base2:Collector
2sd2575 e.pdf
Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas
2sd2575.pdf
Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas
2sd2573.pdf
Power Transistors2SD2573Silicon NPN triple diffusion planar typeFor high current amplification, power amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings Ta = 25C0.70.10.70.1Parameter Symbol Rating Uni
2sd2578.pdf
isc Silicon NPN Power Transistor 2SD2578DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd2579.pdf
isc Silicon NPN Power Transistor 2SD2579DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2G230 | 2SB1456 | 2N2222DCSM
History: 2G230 | 2SB1456 | 2N2222DCSM
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050