2SD2573
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2573
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta: MT-3-A1
Búsqueda de reemplazo de transistor bipolar 2SD2573
2SD2573
Datasheet (PDF)
..1. Size:85K panasonic
2sd2573.pdf 
Power Transistors2SD2573Silicon NPN triple diffusion planar typeFor high current amplification, power amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings Ta = 25C0.70.10.70.1Parameter Symbol Rating Uni
8.1. Size:101K toshiba
2sd2571.pdf
2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating
8.2. Size:45K sanyo
2sd2578.pdf
Ordering number:5794NPN Triple Diffused Planar Silicon Transistor2SD2578Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2578] Adoption of MBIT process.16.05.63.4 On-chip damper diode.3.12.82.0 2.01.00.6
8.3. Size:43K sanyo
2sd2579.pdf
Ordering number:5795NPN Triple Diffused Planar Silicon Transistor2SD2579Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2579] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.61 2 31:Base2:Collector
8.4. Size:38K panasonic
2sd2575 e.pdf
Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas
8.5. Size:34K panasonic
2sd2575.pdf
Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas
8.6. Size:215K inchange semiconductor
2sd2578.pdf
isc Silicon NPN Power Transistor 2SD2578DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
8.7. Size:216K inchange semiconductor
2sd2579.pdf
isc Silicon NPN Power Transistor 2SD2579DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
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