2SD2620J Todos los transistores

 7.1. Size:43K  panasonic
 2sd2620.pdf

Transistors 2SD2620J Silicon NPN epitaxial planer type Unit mm For low-frequency amplification 1.60+0.05 0.03 0.12+0.03 0.01 1.00 0.05 3 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 1 2 High emitter to base voltage VBEO 0.27 0.02 (0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

 8.1. Size:28K  sanyo
 2sd2627.pdf

Ordering number ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0

 8.2. Size:29K  sanyo
 2sd2624.pdf

Ordering number ENN6500A 2SD2624 NPN Triple Diffused Planar Silicon Transistor 2SD2624 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2624] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

 8.3. Size:40K  sanyo
 2sd2629.pdf

Ordering number ENN6352 NPN Triple Diffused Planar Silicon Transistor 2SD2629 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079C High reliability (Adoption of HVP process). [2SD2629] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0.7 0.75

 8.4. Size:30K  sanyo
 2sd2627ls.pdf

Ordering number ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 1.

 8.5. Size:71K  panasonic
 2sd2623.pdf

Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.65) Absolute Maximum Ratings Ta = 25 C 1.3 0.1 Parameter Symbol Rating Unit 2

 8.6. Size:88K  panasonic
 2sd2621.pdf

Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings Ta

 8.7. Size:456K  blue-rocket-elect
 2sd2625z9 br3dd2625z9p.pdf

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

 8.8. Size:457K  blue-rocket-elect
 2sd2625v9 br3dd2625v9p.pdf

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

 8.9. Size:445K  blue-rocket-elect
 2sd2625x9 br3dd2625x9p.pdf

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /