2SD2635 Todos los transistores

Ordering number ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit mm 2064A Features [2SD2635] 2.5 Darlington connection 1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature. 0.6 0.9 0.5 1 2 3 0.45 1

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit mm High-Power Switching Applications High-breakdown voltage VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit mm High Speed Switching Applications. High voltage VCBO = 1700 V Low saturation voltage V = 5 V (max) CE (sat) High speed t = 0.8 s (max) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector

Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26

Ordering number ENN6474B 2SD2634 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2634] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0

Power Transistor 2SD2633 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 I A V 200 V CBO V =200V 100max CBO CB 10.0 3.3 2.8 C0.5 V 150 V I V =6V 10max mA CEO EBO EB I =50mA V 6 V V C 150min V EBO CEO I 8 A h V =2V, I =6A 2000min C FE CE C I 1 A V I =6

isc Silicon NPN Darlington Power Transistor 2SD2633 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V =1.5V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur

isc Silicon NPN Power Transistor 2SD2634 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME