2SD2635 Todos los transistores

 

2SD2635 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD2635
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: NMP

 Búsqueda de reemplazo de transistor bipolar 2SD2635

 

2SD2635 Datasheet (PDF)

 ..1. Size:35K  sanyo
2sd2635.pdf

2SD2635
2SD2635

Ordering number:ENN6449NPN Epitaxial Planar Silicon Darlington Transistor2SD2635120V / 2A Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit:mm2064AFeatures [2SD2635]2.5 Darlington connection1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature.0.60.9 0.51 2 30.451 :

 8.1. Size:239K  toshiba
2sd2636.pdf

2SD2635
2SD2635

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit: mmHigh-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage

 8.2. Size:312K  toshiba
2sd2638.pdf

2SD2635
2SD2635

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit: mm High Speed Switching Applications. High voltage: VCBO = 1700 V Low saturation voltage: V = 5 V (max) CE (sat) High speed: t = 0.8 s (max) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector

 8.3. Size:29K  sanyo
2sb1683 2sd2639 2sd2639.pdf

2SD2635
2SD2635

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

 8.4. Size:30K  sanyo
2sd2634.pdf

2SD2635
2SD2635

Ordering number : ENN6474B2SD2634NPN Triple Diffused Planar Silicon Transistor2SD2634Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2634] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0

 8.5. Size:22K  no
2sd2633.pdf

2SD2635

Power Transistor 2SD2633Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2I AV 200 V CBO V =200V 100maxCBO CB10.03.32.8C0.5V 150 V I V =6V 10max mACEO EBO EBI =50mAV 6 V V C 150min VEBO CEOI 8 A h V =2V, I =6A 2000minC FE CE CI 1 A V I =6

 8.6. Size:209K  inchange semiconductor
2sd2633.pdf

2SD2635
2SD2635

isc Silicon NPN Darlington Power Transistor 2SD2633DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V =1.5V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general pur

 8.7. Size:215K  inchange semiconductor
2sd2634.pdf

2SD2635
2SD2635

isc Silicon NPN Power Transistor 2SD2634DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

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