2SD2639 Todos los transistores

Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit mm High-Power Switching Applications High-breakdown voltage VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit mm High Speed Switching Applications. High voltage VCBO = 1700 V Low saturation voltage V = 5 V (max) CE (sat) High speed t = 0.8 s (max) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector

Ordering number ENN6474B 2SD2634 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2634] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0

Ordering number ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit mm 2064A Features [2SD2635] 2.5 Darlington connection 1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature. 0.6 0.9 0.5 1 2 3 0.45 1

Power Transistor 2SD2633 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 I A V 200 V CBO V =200V 100max CBO CB 10.0 3.3 2.8 C0.5 V 150 V I V =6V 10max mA CEO EBO EB I =50mA V 6 V V C 150min V EBO CEO I 8 A h V =2V, I =6A 2000min C FE CE C I 1 A V I =6

isc Silicon NPN Darlington Power Transistor 2SD2633 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V =1.5V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur

isc Silicon NPN Power Transistor 2SD2634 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME