2SD2689LS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2689LS

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO-220FI

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2SD2689LS datasheet

 ..1. Size:30K  sanyo
 2sd2689ls.pdf pdf_icon

2SD2689LS

Ordering number ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2689LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base

 7.1. Size:208K  inchange semiconductor
 2sd2689.pdf pdf_icon

2SD2689LS

isc Silicon NPN Power Transistor 2SD2689 DESCRIPTION High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV Horizontal Deflection Output Applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co

 8.1. Size:175K  toshiba
 2sd2686.pdf pdf_icon

2SD2689LS

2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-em

 8.2. Size:39K  sanyo
 2sd2688.pdf pdf_icon

2SD2689LS

Ordering number ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2688LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9

MOSTRAR MÁS

Otros transistores... 2SD2650, 2SD2651, 2SD2659, 2SD2663, 2SD2678, 2SD2679, 2SD2687S, 2SD2688LS, 2SC4793, CBSL100, NESG2101M05, NESG2101M16, NESG210719, NESG2107M33, NESG250134, NESG260234, NESG270034