NESG2101M16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NESG2101M16
Código: zH
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.19 W
Tensión colector-base (Vcb): 13 V
Tensión colector-emisor (Vce): 5 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 14000 MHz
Ganancia de corriente contínua (hfe): 130
Paquete / Cubierta: MINIMOLD
Búsqueda de reemplazo de transistor bipolar NESG2101M16
NESG2101M16 Datasheet (PDF)
nesg2101m16.pdf
NPN SILICON GERMANIUM RF TRANSISTORNESG2101M16NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
nesg2101m05.pdf
NEC's NPN SiGe NESG2101M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat
nesg210719.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTORNESG210719NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par
nesg2107m33.pdf
PRELIMINARY DATA SHEETNEC's NPN SILICON TRANSISTOR NESG2107M33FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGEORDERING INFORMATIONPART NUMBER QUANTITY SUPPLYING FORMNESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed tapingNESG2107M33-T3-A 10 kpcs
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NB313Z | 2SD2152 | BD433A | NA31XH | ME512
History: NB313Z | 2SD2152 | BD433A | NA31XH | ME512
Liste
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