NESG2107M33 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NESG2107M33

Código: D7

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.13 W

Tensión colector-base (Vcb): 13 V

Tensión colector-emisor (Vce): 5 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7000 MHz

Ganancia de corriente contínua (hFE): 140

Encapsulados: M33

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NESG2107M33 datasheet

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 nesg2107m33.pdf pdf_icon

NESG2107M33

PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed taping NESG2107M33-T3-A 10 kpcs

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 nesg210719.pdf pdf_icon

NESG2107M33

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par

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 nesg2101m16.pdf pdf_icon

NESG2107M33

NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high- gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

 7.2. Size:575K  nec
 nesg2101m05.pdf pdf_icon

NESG2107M33

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE M05 SOT-343 footprint, with a height of only 0.59 mm Flat

MOSTRAR MÁS

Otros transistores... 2SD2679, 2SD2687S, 2SD2688LS, 2SD2689LS, CBSL100, NESG2101M05, NESG2101M16, NESG210719, B772, NESG250134, NESG260234, NESG270034, NESG3031M05, NESG3031M14, NESG3032M14, NESG3033M14, NESG4030M14