NESG250134 Todos los transistores

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 nesg250134.pdf

NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN MSG = 23 dB TYP @ VCE = 3.6

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 nesg270034.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz Using UHS2-HV process (SiGe tec

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 nesg2101m16.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high- gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

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 nesg204619.pdf

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGE ORD

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 nesg210719.pdf

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par

 9.5. Size:302K  nec
 nesg2107m33.pdf

PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed taping NESG2107M33-T3-A 10 kpcs

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 nesg260234.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz MSG (Maximum Stable Gain) = 23 dB T

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 nesg2021m16.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

 9.8. Size:287K  nec
 nesg2046m33.pdf

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS VCEO (absolute maximum ratings) = 5.0 V 3-PIN SUPER LEAD-LESS MINIMOLD (

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 nesg2031m05.pdf

NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE SOT-343 footprint, with a height of only 0.59 mm Flat lead st

 9.10. Size:729K  nec
 nesg2021m05.pdf

DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b

 9.11. Size:223K  nec
 nesg2031m16.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

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 nesg2030m04.pdf

NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES SiGe TECHNOLOGY fT = 60 GHz Process LOW NOISE FIGURE NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION NEC's NESG2030M04 is fabric

 9.13. Size:575K  nec
 nesg2101m05.pdf

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE M05 SOT-343 footprint, with a height of only 0.59 mm Flat