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2N6989 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6989
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO-116
     - Selección de transistores por parámetros

 

2N6989 Datasheet (PDF)

 0.1. Size:198K  optek
2n6989u.pdf pdf_icon

2N6989

Product Bulletin JANTX, JANTXV, 2N6989UJanuary 1996Surface Mount Quad NPN TransistorType JANTX, JANTXV, 2N6989UFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage . . . . . . . . . . . . . .

 0.2. Size:57K  microsemi
2n6989-2n6990.pdf pdf_icon

2N6989

TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6

 9.1. Size:196K  optek
2n6987u.pdf pdf_icon

2N6989

Product Bulletin JANTX, JANTXV, 2N6987USeptember 1996Surface Mount Quad PNP TransistorType JANTX, JANTXV, 2N6987UFeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Base Voltage . . . . . . . . . . . . . .

 9.2. Size:11K  semelab
2n698.pdf pdf_icon

2N6989

2N698Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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