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2N6989U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6989U
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: 20PIN-LEADLESS

 Búsqueda de reemplazo de transistor bipolar 2N6989U

 

2N6989U Datasheet (PDF)

 ..1. Size:198K  optek
2n6989u.pdf

2N6989U
2N6989U

Product Bulletin JANTX, JANTXV, 2N6989UJanuary 1996Surface Mount Quad NPN TransistorType JANTX, JANTXV, 2N6989UFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage . . . . . . . . . . . . . .

 8.1. Size:57K  microsemi
2n6989-2n6990.pdf

2N6989U
2N6989U

TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6

 9.1. Size:196K  optek
2n6987u.pdf

2N6989U
2N6989U

Product Bulletin JANTX, JANTXV, 2N6987USeptember 1996Surface Mount Quad PNP TransistorType JANTX, JANTXV, 2N6987UFeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Base Voltage . . . . . . . . . . . . . .

 9.2. Size:11K  semelab
2n698.pdf

2N6989U

2N698Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

 9.3. Size:50K  microsemi
2n6987u 2n6988.pdf

2N6989U
2N6989U

TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices Qualified Level JAN 2N6987 JANTX 2N6988 2N6987U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (4) 60 Vdc VCEO 2N6987* Collector-Base Voltage (4) 60 Vdc VCBO TO- 116 Emitter-Base Voltage (4) 5.0 Vdc VEBO Collector C

 9.4. Size:69K  semicoa
2n6987.pdf

2N6989U
2N6989U

Data Sheet No. 2N6987Generic Part Number:Type 2N69872N6987Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: An array of four independent PNPsilicon switching transistors. Housed in a cerdip case. Also available in chip form usingthe 0600 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/558 whichSemicoa meet

 9.5. Size:71K  semicoa
2n6988.pdf

2N6989U
2N6989U

Data Sheet No. 2N6988Generic Part Number:Type 2N69882N6988Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: General purpose silicon transistorfor switching and amplifier applica-tions. Housed in a 14-Lead Flat Package. Also available in chip form using the0600 chip geometry. The Min and Max limits shown areper MIL-PRF-1950

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History: 2N4969 | 2N3125

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