2N7371 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7371

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO-254AA

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2N7371 datasheet

 ..1. Size:52K  microsemi
 2n7371.pdf pdf_icon

2N7371

TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices Qualified Level JAN, JANTX 2N7371 JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Base Current I 0.2 Adc B Collector Current 12 Adc IC Total Power

 9.1. Size:62K  microsemi
 2n7370.pdf pdf_icon

2N7371

TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices Qualified Level JAN 2N7370 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Base Current I 0.2 Adc B Collector Current 12 Adc IC Total Power Di

 9.2. Size:56K  microsemi
 2n7372 2n7373.pdf pdf_icon

2N7371

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 2N7372 - PNP FAX (561) 845-7813 2N7373 - NPN APPLICATIONS APPLICATIONS Power Supply Inverters and Converters General Purpose Amplifiers Complimentary FEATURES FEATURES Planar Process for Reliability Power Transistors Fast Switching in Hermetic Isolated High-Frequency P

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