FJN3309R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJN3309R

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-92

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FJN3309R datasheet

 ..1. Size:33K  fairchild semi
 fjn3309r.pdf pdf_icon

FJN3309R

FJN3309R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K ) Complement to FJN4309R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector

 8.1. Size:37K  fairchild semi
 fjn3307r.pdf pdf_icon

FJN3309R

FJN3307R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=47K ) Complement to FJN4307R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

 8.2. Size:69K  fairchild semi
 fjn3305r.pdf pdf_icon

FJN3309R

FJN3305R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to FJN4305R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

 8.3. Size:69K  fairchild semi
 fjn3301r.pdf pdf_icon

FJN3309R

FJN3301R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=4.7K ) Complement to FJN4301R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units

MOSTRAR MÁS

Otros transistores... FJN3302R, FJN3303, FJN3303R, FJN3304R, FJN3305R, FJN3306R, FJN3307R, FJN3308R, C945, FJN3310R, FJN3311R, FJN3312R, FJN3313R, FJN3314R, FJN3315R, FJN4301R, FJN4302R