FJN3312R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJN3312R

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-92

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FJN3312R datasheet

 ..1. Size:26K  fairchild semi
 fjn3312r.pdf pdf_icon

FJN3312R

FJN3312R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJN4312R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-

 8.1. Size:32K  fairchild semi
 fjn3310r.pdf pdf_icon

FJN3312R

FJN3310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJN4310R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

 8.2. Size:27K  fairchild semi
 fjn3313r.pdf pdf_icon

FJN3312R

FJN3313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

 8.3. Size:36K  fairchild semi
 fjn3315r.pdf pdf_icon

FJN3312R

FJN3315R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=10K ) TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage 5

MOSTRAR MÁS

Otros transistores... FJN3304R, FJN3305R, FJN3306R, FJN3307R, FJN3308R, FJN3309R, FJN3310R, FJN3311R, 2N3055, FJN3313R, FJN3314R, FJN3315R, FJN4301R, FJN4302R, FJN4303R, FJN4304R, FJN4305R