FJN3314R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJN3314R
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 0.5 kOhm
Ratio típica de resistencia R1/R2 = 20
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 3.7
pF
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta:
TO-92
Búsqueda de reemplazo de transistor bipolar FJN3314R
FJN3314R
Datasheet (PDF)
..1. Size:28K fairchild semi
fjn3314r.pdf 
FJN3314RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJN4314RTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCV
8.1. Size:32K fairchild semi
fjn3310r.pdf
FJN3310RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJN4310RTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVCBO Collector-
8.2. Size:27K fairchild semi
fjn3313r.pdf
FJN3313RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJN4313RTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVC
8.3. Size:36K fairchild semi
fjn3315r.pdf
FJN3315RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=10K)TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVCBO Collector-Base Voltage 5
8.4. Size:26K fairchild semi
fjn3312r.pdf
FJN3312RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJN4312RTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value UnitsVCBO Collector-
8.5. Size:26K fairchild semi
fjn3311r.pdf
FJN3311RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJN4311RTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVCBO Collector-B
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
