FJN4310R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJN4310R

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-92

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FJN4310R datasheet

 ..1. Size:32K  fairchild semi
 fjn4310r.pdf pdf_icon

FJN4310R

FJN4310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJN3310R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-

 8.1. Size:26K  fairchild semi
 fjn4312r.pdf pdf_icon

FJN4310R

FJN4312R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJN3312R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-

 8.2. Size:27K  fairchild semi
 fjn4313r.pdf pdf_icon

FJN4310R

FJN4313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJN3313R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB

 8.3. Size:26K  fairchild semi
 fjn4311r.pdf pdf_icon

FJN4310R

FJN4311R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJN3311R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

MOSTRAR MÁS

Otros transistores... FJN4302R, FJN4303R, FJN4304R, FJN4305R, FJN4306R, FJN4307R, FJN4308R, FJN4309R, BC557, FJN4311R, FJN4312R, FJN4313R, FJN4314R, FJN5471, FJN965, FJNS3201R, FJNS3202R