FJV3106R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJV3106R
Código: R26
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar FJV3106R
FJV3106R Datasheet (PDF)
fjv3106r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV4106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R26BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjv3108r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjv3104r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjv3102r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjv3105r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R25BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note
fjv3107r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV4107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R27BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjv3101r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV4101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R21BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
fjv3103r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV4103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R23BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjv3109r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FJV3109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K) Complement to FJV4109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR29RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .