FJV4107R Todos los transistores

 

FJV4107R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJV4107R
   Código: R77
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de FJV4107R

   - Selección ⓘ de transistores por parámetros

 

FJV4107R Datasheet (PDF)

 ..1. Size:56K  fairchild semi
 fjv4107r.pdf pdf_icon

FJV4107R

FJV4107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV3107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R77BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.1. Size:52K  fairchild semi
 fjv4109r.pdf pdf_icon

FJV4107R

FJV4109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to FJV3109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR79RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.2. Size:56K  fairchild semi
 fjv4103r.pdf pdf_icon

FJV4107R

FJV4103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV3103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR73R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:89K  fairchild semi
 fjv4106r.pdf pdf_icon

FJV4107R

FJV4106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV3106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R76BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: UN1518 | BUL74A | 2SD780V6 | MMBT3904HE3 | 2SC806 | 2SA1558 | 2SC652

 

 
Back to Top

 


 
.