2N6319 Todos los transistores

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2N6319 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6319

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 80 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 1000 pF

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6319

 

2N6319 Datasheet (PDF)

5.1. 2n6315-18.pdf Size:165K _mospec

2N6319
2N6319

A A A A

5.2. 2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf Size:196K _bocasemi

2N6319
2N6319

A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.3. 2n6312 2n6313 2n6314.pdf Size:131K _inchange_semiconductor

2N6319
2N6319

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Abso

5.4. 2n6315 2n6316.pdf Size:131K _inchange_semiconductor

2N6319
2N6319

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector

5.5. 2n6317 2n6318.pdf Size:131K _inchange_semiconductor

2N6319
2N6319

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector

Otros transistores... 2N6310 , 2N6311 , 2N6312 , 2N6313 , 2N6314 , 2N6315 , 2N6317 , 2N6318 , TIP35C , 2N632 , 2N6320 , 2N6321 , 2N6322 , 2N6323 , 2N6324 , 2N6325 , 2N6326 .

 


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  2N6319
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Introduzca al menos 1 números o letras