FJX3002R Todos los transistores

 

FJX3002R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJX3002R
   Código: S02
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar FJX3002R

 

FJX3002R Datasheet (PDF)

 ..1. Size:43K  fairchild semi
fjx3002r.pdf

FJX3002R
FJX3002R

FJX3002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX4002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S02BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:39K  fairchild semi
fjx3009r.pdf

FJX3002R
FJX3002R

FJX3009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX4009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS09RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.2. Size:43K  fairchild semi
fjx3007r.pdf

FJX3002R
FJX3002R

FJX3007RSwitching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX4007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S07BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:41K  fairchild semi
fjx3004r.pdf

FJX3002R
FJX3002R

FJX3004R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K, R2=47K) Complement to FJX4004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S04BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.4. Size:43K  fairchild semi
fjx3003r.pdf

FJX3002R
FJX3002R

FJX3003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX4003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S03BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.5. Size:42K  fairchild semi
fjx3001r.pdf

FJX3002R
FJX3002R

FJX3001RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX4001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S01BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

 8.6. Size:43K  fairchild semi
fjx3006r.pdf

FJX3002R
FJX3002R

FJX3006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX4006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S06BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.7. Size:42K  fairchild semi
fjx3008r.pdf

FJX3002R
FJX3002R

FJX3008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX4008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S08BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.8. Size:42K  fairchild semi
fjx3005r.pdf

FJX3002R
FJX3002R

FJX3005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX4005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S05BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

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History: PBHV9040X | BRT60 | SC108 | 2N869AX

 

 
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