FJX3011R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJX3011R

Código: S11

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-323

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FJX3011R datasheet

 ..1. Size:32K  fairchild semi
 fjx3011r.pdf pdf_icon

FJX3011R

FJX3011R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJX4011R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C S11 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet

 8.1. Size:33K  fairchild semi
 fjx3013r.pdf pdf_icon

FJX3011R

FJX3013R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to FJX4013R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S13 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise not

 8.2. Size:38K  fairchild semi
 fjx3010r.pdf pdf_icon

FJX3011R

FJX3010R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJX4010R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C S10 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet

 8.3. Size:42K  fairchild semi
 fjx3015r.pdf pdf_icon

FJX3011R

FJX3015R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=10K ) 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S15 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value

MOSTRAR MÁS

Otros transistores... FJX3003R, FJX3004R, FJX3005R, FJX3006R, FJX3007R, FJX3008R, FJX3009R, FJX3010R, C1815, FJX3012R, FJX3013R, FJX3014R, FJX3015R, FJX3904, FJX3906, FJX4001R, FJX4002R