FJX4007R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJX4007R
Código: S57
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 5.5
pF
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta:
SOT-323
Búsqueda de reemplazo de transistor bipolar FJX4007R
FJX4007R
Datasheet (PDF)
..1. Size:43K fairchild semi
fjx4007r.pdf 
FJX4007RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX3007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S57BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.1. Size:43K fairchild semi
fjx4005r.pdf
FJX4005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX3005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S55BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not
8.2. Size:42K fairchild semi
fjx4004r.pdf
FJX4004RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJX3004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS54R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.3. Size:42K fairchild semi
fjx4001r.pdf
FJX4001R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX3001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS51R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
8.4. Size:42K fairchild semi
fjx4008r.pdf
FJX4008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX3008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS58R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.5. Size:42K fairchild semi
fjx4002r.pdf
FJX4002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX3002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS52R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.6. Size:43K fairchild semi
fjx4003r.pdf
FJX4003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX3003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS53R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.7. Size:43K fairchild semi
fjx4006r.pdf
FJX4006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX3006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S56BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.8. Size:39K fairchild semi
fjx4009r.pdf
FJX4009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX3009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS59RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame
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