FJX4008R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJX4008R
Código: S58
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de transistor bipolar FJX4008R
FJX4008R Datasheet (PDF)
fjx4008r.pdf
FJX4008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX3008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS58R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4005r.pdf
FJX4005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX3005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S55BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not
fjx4004r.pdf
FJX4004RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJX3004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS54R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4007r.pdf
FJX4007RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX3007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S57BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4001r.pdf
FJX4001R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX3001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS51R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
fjx4002r.pdf
FJX4002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX3002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS52R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4003r.pdf
FJX4003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX3003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS53R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4006r.pdf
FJX4006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX3006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S56BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx4009r.pdf
FJX4009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX3009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS59RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame
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