FMBS5551 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FMBS5551
   Código: 3S1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SSOT-6

Búsqueda de reemplazo de transistor bipolar FMBS5551

FMBS5551 Datasheet (PDF)

..1. Size:90K fairchild semi
fmbs5551.pdf

FMBS5551NCNPN General Purpose AmplifierC1 This device is designed for general purpose high voltage amplifiers Eand gas discharge display drivers.BCCpin #1SuperSOTTM-6 singleMark: .3S1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Volta

9.1. Size:95K fairchild semi
fmbs5401.pdf

FMBS5401NCPNP General Purpose AmplifierC1 This device is designed as a general purpose amplifier and switch for Eapplications requiring high voltage.BCCpin #1SuperSOTTM-6 singleMark: .4S1PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Bas

9.2. Size:176K fairchild semi
fmbs549.pdf

August 2006FMBS549tmPNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. NC C1EBCCpin #1SuperSOTTM-6 singleMark: .S1Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050