FMBS5551 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMBS5551
Código: 3S1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSOT-6
Búsqueda de reemplazo de transistor bipolar FMBS5551
FMBS5551 Datasheet (PDF)
fmbs5551.pdf
FMBS5551NCNPN General Purpose AmplifierC1 This device is designed for general purpose high voltage amplifiers Eand gas discharge display drivers.BCCpin #1SuperSOTTM-6 singleMark: .3S1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Volta
fmbs5401.pdf
FMBS5401NCPNP General Purpose AmplifierC1 This device is designed as a general purpose amplifier and switch for Eapplications requiring high voltage.BCCpin #1SuperSOTTM-6 singleMark: .4S1PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Bas
fmbs549.pdf
August 2006FMBS549tmPNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. NC C1EBCCpin #1SuperSOTTM-6 singleMark: .S1Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
