KSC2784 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC2784

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 1.6 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO-92S

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KSC2784 datasheet

 ..1. Size:46K  fairchild semi
 ksc2784.pdf pdf_icon

KSC2784

KSC2784 Audio Frequency Low Noise Amplifier Complement to KSA1174 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA PC

 8.1. Size:40K  fairchild semi
 ksc2785.pdf pdf_icon

KSC2784

KSC2785 Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC

 8.2. Size:41K  fairchild semi
 ksc2787.pdf pdf_icon

KSC2784

KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage VCEO=30V High Current Gain Bandwidth Product fT=300MHz (TYP) Low Output Capacitance Cob=2.0pF (TYP) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Co

 8.3. Size:74K  fairchild semi
 ksc2786.pdf pdf_icon

KSC2784

KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product fT=600MHz (TYP) High Power Gain GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

MOSTRAR MÁS

Otros transistores... KSA1203, KSA1281, KSA1625, KSB1116S, KSB798, KSC1815, KSC2001, KSC2330A, C1815, KSC2881, KSC2883, KSC5019, KSC5042F, KSP5179, KSP94, KST3906, KST4125