NZT560A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NZT560A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de transistor bipolar NZT560A
NZT560A Datasheet (PDF)
nzt560 nzt560a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nzt560-a.pdf
May 2009NZT560/NZT560ANPN Low Saturation TransistorFeatures2 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.3211. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage
nzt560.pdf
NZT560/NZT560ANPN Low Saturation Transistor4 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter NZT560/NZT560A UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 V
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DMG90401
History: DMG90401
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050