NZT751 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NZT751
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de transistor bipolar NZT751
NZT751 Datasheet (PDF)
nzt751.pdf
NZT751CECBSOT-223PNP Current Driver TransistorThis device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 5P.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 VV Emitter-Base Voltage 5.0 VEBOIC Collec
nzt753.pdf
NZT753PNP Current Driver Transistor4 This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P.321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage - 100 VVCBO Collector-Base Voltage - 120 VVE
nzt753.pdf
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Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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