SD1398
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1398
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 53
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 3.5
V
Corriente del colector DC máxima (Ic): 2.4
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7.5
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: M142
Búsqueda de reemplazo de transistor bipolar SD1398
SD1398
Datasheet (PDF)
..1. Size:73K st
sd1398.pdf 
SD1398RF & MICROWAVE TRANSISTORS850-960 MHz APPLICATIONS.850 - 960 MHZ.24 VOLTS.COMMON EMITTER.OVERLAY GEOMETRY.GOLD METALLIZATION.P 6.0 W MIN. WITH 10.0 dB GAIN=OUT.230 6LFL (M142)epoxy sealedORDER CODE BRANDINGSD1398 SD1398PIN CONNECTIONDESCRIPTIONThe SD1398 is a gold metallized epitaxial siliconNPN transistor designed for high linearity ClassAB operation
0.1. Size:215K inchange semiconductor
2sd1398.pdf
isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
9.1. Size:56K st
sd1391.pdf
SD1391RF & MICROWAVE TRANSISTORSUHF BASE STATION APPLICATIONSP RELIMINARY DATA.470 MHZ.24 VOLTS.EFFICIENCY 50% MIN..POUT 15 W WITH 11.0 dB MIN. GAIN=.CLASS AB.COMMON EMITTER.2 30 x .3 60 6LF L (M14 2)ORDE R CODE BRANDINGSD1391 SD1391PIN CONNECTIONDESCRIPTIONThe SD1391 is a gold metallized NPN planar tran-sistor using diffused emitter ballast resistors forreli
9.2. Size:50K st
sd1390.pdf
SD1390RF & MICROWAVE TRANSISTORSUHF BASE STATION APPLICATIONSP RELIMINARY DATA.470 MHZ.24 VOLTS.P 1.5 W WITH 13.0 dB MIN. GAINOUT =.CLASS A.COMMON EMITTER.POWER SATURATION 2.2 W MIN..280 x 4LSL (M123)ORDE R CODE BRANDINGSD1390 SD1390PIN CONNECTIONDESCRIPTIONThe SD1390 is a gold metallized NPN planar tran-sistor using diffused emitter ballast resistors forreli
9.7. Size:26K wingshing
2sd1397.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
9.8. Size:204K inchange semiconductor
2sd1393.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am
9.9. Size:215K inchange semiconductor
2sd1399.pdf
isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
9.10. Size:204K inchange semiconductor
2sd1394.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
9.11. Size:207K inchange semiconductor
2sd1390.pdf
isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
9.12. Size:205K inchange semiconductor
2sd1395.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
9.13. Size:214K inchange semiconductor
2sd1397.pdf
isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
9.14. Size:212K inchange semiconductor
2sd1391.pdf
isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
9.15. Size:214K inchange semiconductor
2sd1396.pdf
isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
