TN3019A Todos los transistores

 ..1. Size:448K  fairchild semi
 tn3019a.pdf

TN3019A TO-226 C B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 1

 8.1. Size:522K  semtech
 mmftn3019e.pdf

MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Vo

 8.2. Size:330K  msksemi
 mmftn3019e-ms.pdf

www.msksemi.com MMFTN3019E-MS Semiconductor Compiance Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Continuous Gate-Source Voltage 20V V 3 I Continuous Drain Current 100 mA D P Power Dissipation 150 mW D 2 R JA Thermal Resistance from Junction to Ambient 833 C /W 1. Gate 2. Source TSTG Storage Te

 9.1. Size:261K  cystek
 mtn3018s3.pdf

 9.2. Size:462K  semtech
 mmftn3018w.pdf

MMFTN3018W Silicon N-Channel MOSFET Drain Applications Interfacing, switching Gate 1. Gate 2. Source 3. Drain Source SOT-323 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS 20 V Drain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mW Total Power