2N6340 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6340
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N6340
2N6340 Datasheet (PDF)
2n6338 2n6339 2n6340 2n6341.pdf
Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrialmilitary power amplifier and switching circuit2N6340applications. High CollectorEmitter Sustaining Voltage 2N6341*VCEO(sus) = 100 Vdc (Min) 2N6338VCEO(sus) = 120 Vdc (Min) 2N6339*Motorola Preferred De
2n6338 2n6339 2n6340 2n6341.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base
2n6338 2n6339 2n6340 2n6341.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli
2n6338 2n6339 2n6340 2n6341.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr
2n6340x.pdf
2N6340XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6342-49 2n6342 2n6343 2n6344 2n6345 2n6346 2n6347 2n6348 2n6349.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6342/D2N6342TriacsthruSilicon Bidirectional Triode Thyristors2N6349. . . designed primarily for full-wave ac control applications, such as light dimmers,motor controls, heating controls and power supplies; or wherever full-wave silicongate controlled solid-state devices are needed. Triac type thyristors switch fro
2n6346a 2n6347a 2n6348a 2n6349a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6346A/DTriacs2N6346ASilicon Bidirectional Triode Thyristorsthru. . . designed primarily for full-wave ac control applications, such as light dimmers,2N6349Amotor controls, heating controls and power supplies; or wherever full-wave silicongate controlled solid-state devices are needed. Triac type thyristors switch
2n6338 2n6341.pdf
2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc
2n6341x.pdf
2N6341XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 150V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
Otros transistores... 2N6330 , 2N6331 , 2N6338 , 2N6338A , 2N6339 , 2N6339A , 2N6339X , 2N634 , 2N3904 , 2N6340A , 2N6341 , 2N6341A , 2N6347 , 2N634A , 2N635 , 2N6350 , 2N6351 .
