2SB1578 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1578
Código: GB1_GB2_GB3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Búsqueda de reemplazo de transistor bipolar 2SB1578
2SB1578 Datasheet (PDF)
2sb1578.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DATA SHEETSILICON TRANSISTOR2SB1578PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1578 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES New package with dimensions in between those of small signaland power signal package High curren
2sb1578.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SB1578SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to 2SD24250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO
2sb1571.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SB1571PNP SILICON EPITAXIAL TRANSISTORPACKAGE DRAWING (Unit: mm)FEATURES Low VCE(sat): VCE(sat)1 -0.35 V Complementary to 2SD24024.50.11.60.21.50.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)Collector to Base Voltage VCBO -50 VCollector to Emitter Voltage VCEO -30 VCE BEmitter to Base Voltage VEBO -6.0 V0.42 0
2sb1574.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Power Transistors2SB1574Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm6.50.12.30.15.30.14.350.1 Features 0.50.1 Possible to tsolder radiation fin directly to printed circuit boad Type with universal characteristics High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO1
2sb1570.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
E(70)BDarlington 2SB1570Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V
2sb1571.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SB15711.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24020.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -6 Collector Cur
2sb1572.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SB15721.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Cur
2sb1574.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SMD Type TransistorsPNP Transistors2SB1574TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Collector breakdown voltage: VCBO/VCEO = 50V Collector current: IC = 2A For low-frequency output amplification0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Ma
2sb1570.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor 2SB1570DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series regulator and general purp
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BC847CL
History: BC847CL
![2SB1578](https://alltransistors.com/images/us.png)
![2SB1578](https://alltransistors.com/images/es.png)
![2SB1578](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D