2SB1578 Todos los transistores

DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES New package with dimensions in between those of small signal and power signal package High curren

SMD Type Transistors PNP Transistors 2SB1578 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to 2SD2425 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING (Unit mm) FEATURES Low VCE(sat) VCE(sat)1 -0.35 V Complementary to 2SD2402 4.5 0.1 1.6 0.2 1.5 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V C E B Emitter to Base Voltage VEBO -6.0 V 0.42 0

Power Transistors 2SB1574 Silicon PNP epitaxial planar type For low-frequency output amplification Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 Features 0.5 0.1 Possible to tsolder radiation fin directly to printed circuit boad Type with universal characteristics High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO 1

E (70 ) B Darlington 2SB1570 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB= 160V

SMD Type Transistors PNP Transistors 2SB1571 1.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD2402 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type Transistors PNP Transistors 2SB1572 1.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD2403 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type Transistors PNP Transistors 2SB1574 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Collector breakdown voltage VCBO/VCEO = 50V Collector current IC = 2A For low-frequency output amplification 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Ma

isc Silicon PNP Darlington Power Transistor 2SB1570 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2401 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series regulator and general purp