2N6347 Todos los transistores

 

2N6347 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6347

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 250 pF

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO59

Búsqueda de reemplazo de transistor bipolar 2N6347

 

2N6347 Datasheet (PDF)

1.1. 2n6342 2n6343 2n6344 2n6345 2n6346 2n6347 2n6348 2n6349.pdf Size:114K _motorola

2N6347
2N6347

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirectional Triode Thyristors 2N6349 . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a

1.2. 2n6346a 2n6347a 2n6348a 2n6349a.pdf Size:114K _motorola

2N6347
2N6347

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6346A/D Triacs 2N6346A Silicon Bidirectional Triode Thyristors thru . . . designed primarily for full-wave ac control applications, such as light dimmers, 2N6349A motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch fro

 5.1. 2n6341x.pdf Size:10K _update

2N6347

2N6341X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

5.2. 2n6340x.pdf Size:11K _update

2N6347

2N6340X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 5.3. 2n6342-49.pdf Size:114K _motorola

2N6347
2N6347

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirectional Triode Thyristors 2N6349 . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a

5.4. 2n6338 2n6339 2n6340 2n6341.pdf Size:155K _motorola

2N6347
2N6347

Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrialmilitary power amplifier and switching circuit 2N6340 applications. High CollectorEmitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred Device VCEO(sus)

 5.5. 2n6338 2n6341.pdf Size:135K _onsemi

2N6347
2N6347

ON Semiconductort High-Power NPN Silicon 2N6338 Transistors 2N6341* . . . designed for use in industrial-military power amplifier and switching circuit applications. High Collector-Emitter Sustaining Voltage - *ON Semiconductor Preferred Device VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE High DC Current Gain - POWER TRANSISTORS NPN SILICON hFE = 30 - 1

5.6. 2n6338 2n6339 2n6340 2n6341.pdf Size:128K _mospec

2N6347
2N6347

A A A

5.7. 2n6338 2n6339 2n6340 2n6341.pdf Size:154K _jmnic

2N6347
2N6347

JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2

Otros transistores... 2N6339 , 2N6339A , 2N6339X , 2N634 , 2N6340 , 2N6340A , 2N6341 , 2N6341A , 2SC5200 , 2N634A , 2N635 , 2N6350 , 2N6351 , 2N6352 , 2N6353 , 2N6354 , 2N6354A .

 
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