STB1017PI Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB1017PI
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO-220F
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STB1017PI datasheet
..1. Size:328K auk
stb1017pi.pdf 
STB1017PI PNP Silicon Transistor Features PIN Connection Low saturation switching application Power amplifier High Voltage VCEO=-80V Min. Complement to STD1408PI 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STB1017PI STB1017 TO-220F-3L Marking Diagram Column 1 Manufacturer AUK Column 2 Production Information AUK A
9.1. Size:1627K st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch
9.3. Size:1657K st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 STF100N10F7 45 A 30 W STP100N10F7 80A 150 W
9.4. Size:1328K st
stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 8 A STP10N95K5 TAB 130 W STW10N95K5 Worldwide best FOM
9.5. Size:395K st
stb100nf04t4.pdf
STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V
9.7. Size:338K st
stb100nf04l.pdf
STB100NF04L N-CHANNEL 40V - 0.0036 - 100A D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB100NF04L 40 V
9.8. Size:393K st
stb100nf03l.pdf
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 -100A D PAK/I PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB100NF03L-03 30 V
9.9. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
9.10. Size:127K st
stb10na40.pdf
STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB10NA40 400 V
9.11. Size:916K st
stb10ln80k5.pdf
STB10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB10LN80K5 800 V 0.63 8 A 2 Industry s lowest RDS(on) x area 3 Industry s best figure of merit (FoM) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected
9.12. Size:441K st
stb100nh02lt4.pdf
STB100NH02L N-channel 24V - 0.0052 - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB100NH02L 24V
9.13. Size:398K st
stb100nf04 stp100nf04.pdf
STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V
9.14. Size:557K st
stb100n6f7.pdf
STB100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a D PAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TAB STB100N6F7 60 V 5.6 m 100A 125 W Among the lowest RDS(on) on the market 3 Excellent figure of merit (FoM) 1 Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness D2PAK Applications
9.15. Size:648K st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB TAB Features 2 3 1 VDS RDS(on) max. ID Order codes Package 3 1 D2PAK DPAK STB100N10F7 80 A D2PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 3 1 2
9.16. Size:450K st
stb100nh02l.pdf
STB100NH02L N-channel 24V - 0.0052 - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB100NH02L 24V
9.17. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf
STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V
9.19. Size:938K st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
9.20. Size:106K onsemi
nstb1005dxv5.pdf
NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 31 2 The BRT (Bias Resistor Transistor) contains a single transistor with R1 a monolithic bias network consisting of two resistors; a series base R2 resistor and a base-emitter resistor. These digital transistors
9.21. Size:63K onsemi
nstb1002dxv5.pdf
NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter
9.22. Size:63K onsemi
nstb1002dxv5-d.pdf
NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter
9.23. Size:1472K cn vbsemi
stb100nf04.pdf
STB100NF04 www.VBsemi.tw N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.005 at VGS = 10 V 100 40 53 nC 100 % Rg and UIS tested 0.006 at VGS = 4.5 V 98 Material categorization for definitions of compliance please see D TO-263 G S S S D D G
9.24. Size:203K inchange semiconductor
stb100n10f7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB100N10F7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
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